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Part Datasheet Search > MOSFETs > Infineon > BSC057N08NS3GATMA1 Datasheet PDF
BSC057N08NS3GATMA1
$ 0.506
BSC057N08NS3GATMA1 Datasheet PDF (9 Pages)
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BSC057N08NS3GATMA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
PG-TDSON-8
Power Rating
114 W
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.0047 Ω
Polarity
N-Channel
Power Dissipation
114 W
Threshold Voltage
2.8 V
Input Capacitance
2900 pF
Drain to Source Voltage (Vds)
80 V
Continuous Drain Current (Ids)
16A
Rise Time
14 ns
Input Capacitance (Ciss)
2900pF @40V(Vds)
Fall Time
9 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2.5W (Ta), 114W (Tc)

BSC057N08NS3GATMA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
5.35 mm
Size-Width
6.1 mm
Size-Height
1.1 mm
Operating Temperature
-55℃ ~ 150℃

BSC057N08NS3GATMA1 Documents

Infineon
9 Pages / 0.57 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
124 Pages / 1.58 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
7 Pages / 0.07 MByte

BSC057N08NS3 Documents

Infineon
TDSON N-CH 80V 16A
Infineon
Single N-Channel 80V 11mOhm 56NC 2.5W OptiMOS SMT Mosfet - TDSON-8
Infineon
Trans MOSFET N-CH 80V 16A 8Pin TDSON T/R
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