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Part Datasheet Search > MOSFETs > Infineon > BSC060N10NS3 G Datasheet PDF
BSC060N10NS3 G
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BSC060N10NS3 G Datasheet PDF (10 Pages)
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BSC060N10NS3 G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
TDSON-8
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.0053 Ω
Polarity
N-Channel
Power Dissipation
125 W
Threshold Voltage
2.7 V
Drain to Source Voltage (Vds)
100 V
Rise Time
16 ns
Input Capacitance (Ciss)
3700pF @50V(Vds)
Input Power (Max)
125 W
Fall Time
12 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
125 W

BSC060N10NS3 G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
5.9 mm
Size-Width
5.15 mm
Size-Height
1.27 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

BSC060N10NS3 G Documents

Infineon
10 Pages / 0.64 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
11 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte

BSC060N10NS3 Documents

Infineon
TDSON N-CH 100V 14.9A
Infineon
Power Field-Effect Transistor, 14.9A I(D), 100V, 0.006Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Infineon
Trans MOSFET N-CH 100V 14.9A 8Pin TDSON EP
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