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Part Datasheet Search > MOSFETs > Infineon > BSC060N10NS3GATMA1 Datasheet PDF
BSC060N10NS3GATMA1
$ 0.715
BSC060N10NS3GATMA1 Datasheet PDF (10 Pages)
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BSC060N10NS3GATMA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
PG-TDSON-8
Power Rating
125 W
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.0053 Ω
Polarity
N-Channel
Power Dissipation
125 W
Threshold Voltage
2.7 V
Drain to Source Voltage (Vds)
100 V
Continuous Drain Current (Ids)
14.9A
Rise Time
16 ns
Input Capacitance (Ciss)
3700pF @50V(Vds)
Fall Time
12 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
125W (Tc)

BSC060N10NS3GATMA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
5.35 mm
Size-Width
6.1 mm
Size-Height
1.1 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

BSC060N10NS3GATMA1 Documents

Infineon
10 Pages / 0.64 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
7 Pages / 0.07 MByte

BSC060N10NS3 Documents

Infineon
TDSON N-CH 100V 14.9A
Infineon
Power Field-Effect Transistor, 14.9A I(D), 100V, 0.006Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Infineon
Trans MOSFET N-CH 100V 14.9A 8Pin TDSON EP
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