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Part Datasheet Search > MOSFETs > Infineon > BSC520N15NS3GATMA1 Datasheet PDF
BSC520N15NS3GATMA1
$ 0.682
BSC520N15NS3GATMA1 Datasheet PDF (10 Pages)
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BSC520N15NS3GATMA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
PG-TDSON-8
Power Rating
57 W
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.042 Ω
Polarity
N-Channel
Power Dissipation
57 W
Threshold Voltage
3 V
Drain to Source Voltage (Vds)
150 V
Continuous Drain Current (Ids)
21A
Rise Time
4 ns
Input Capacitance (Ciss)
890pF @75V(Vds)
Input Power (Max)
57 W
Fall Time
3 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
57W (Tc)

BSC520N15NS3GATMA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
5.9 mm
Size-Width
5.15 mm
Size-Height
1.27 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

BSC520N15NS3GATMA1 Documents

Infineon
10 Pages / 0.64 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
7 Pages / 0.07 MByte

BSC520N15NS3 Documents

Infineon
TDSON N-CH 150V 21A
Infineon
The BSC520N15NS3 G is a 150V N-channel Power MOSFET that achieves a reduction in RDS (on) of 40% and of 45% in Figure of Merit (FOM). The OptiMOS™ MOSFET offers high system efficiency and industry's lowest RDS (on) within the voltage classes. It is ideally suited for high frequency switching applications and optimized technology for DC-DC converters.
Infineon
TRANSISTOR
Infineon
TDSON N-CH 150V 21A
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