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Part Datasheet Search > IGBTs > Infineon > BSM100GB120DN2K Datasheet PDF
BSM100GB120DN2K
$ 75.758
BSM100GB120DN2K Datasheet PDF (10 Pages)
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BSM100GB120DN2K Specifications

TYPE
DESCRIPTION
Mounting Style
Screw
Number of Pins
7 Pin
Case/Package
34MM-1
Power Dissipation
700 W
Breakdown Voltage (Collector to Emitter)
1.20 kV
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
700000 mW

BSM100GB120DN2K Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended
Size-Length
94 mm
Size-Width
34 mm
Size-Height
30.5 mm

BSM100GB120DN2K Documents

Infineon
10 Pages / 0.3 MByte

BSM100GB120DN2 Documents

Infineon
Trans IGBT Module N-CH 1.2kV 150A 7Pin 34MM
Siemens Semiconductor
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
Eupec
Eupec IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
Infineon
Trans IGBT Module N-CH 1.2kV 150A 7Pin 34MM
Infineon
Trans IGBT Module N-CH 1.2kV 145A 7Pin 62MM
Infineon
Trans IGBT Module N-CH 1200V 145A 700000mW 7Pin 34MM-1
Siemens Semiconductor
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
Eupec
Eupec Infineon power module
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