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Part Datasheet Search > MOSFETs > ROHM Semiconductor > BSM120D12P2C005 Datasheet PDF
BSM120D12P2C005
$ 470.366
BSM120D12P2C005 Datasheet PDF (11 Pages)
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BSM120D12P2C005 Specifications

TYPE
DESCRIPTION
Number of Pins
10 Pin
Case/Package
Module
Number of Channels
1 Channel
Polarity
N-Channel
Power Dissipation
780 W
Threshold Voltage
2.7 V
Drain to Source Voltage (Vds)
1.2 kV
Rise Time
50 ns
Input Capacitance (Ciss)
14000pF @10V(Vds)
Input Power (Max)
780 W
Fall Time
60 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
935000 mW

BSM120D12P2C005 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Bulk
Size-Length
122 mm
Size-Width
45.6 mm
Size-Height
21.1 mm
Operating Temperature
-40℃ ~ 150℃

BSM120D12P2C005 Documents

ROHM Semiconductor
11 Pages / 0.69 MByte
ROHM Semiconductor
33 Pages / 6.15 MByte
ROHM Semiconductor
41 Pages / 0.88 MByte
ROHM Semiconductor
3 Pages / 0.24 MByte
ROHM Semiconductor
2 Pages / 0.16 MByte

BSM120D12P2 Documents

ROHM Semiconductor
Trans SiC MOSFET N-CH 1.2kV 120A 10Pin Case C Tray
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