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BSP125 E6327
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BSP125 E6327 Datasheet PDF (8 Pages)
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BSP125 E6327 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
4 Pin
Voltage Rating (DC)
600 V
Current Rating
120 mA
Case/Package
SOT-223-4
Power Dissipation
1.8W (Ta)
Input Capacitance
150 pF
Gate Charge
6.60 nC
Drain to Source Voltage (Vds)
600 V
Continuous Drain Current (Ids)
120 mA
Input Capacitance (Ciss)
150pF @25V(Vds)
Power Dissipation (Max)
1.8W (Ta)

BSP125 E6327 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tape
Operating Temperature
-55℃ ~ 150℃ (TJ)

BSP125 E6327 Documents

Infineon
8 Pages / 0.51 MByte
Infineon
6 Pages / 0.08 MByte

BSP125 Documents

Infineon
INFINEON BSP125 Power MOSFET, N Channel, 120mA, 600V, 45Ω, 10V, 1.9V
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SIPMOS Small-Signal Transistor (N channel Enhancement mode)
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SOT-223 N-CH 600V 0.12A
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SOT-223 N-CH 600V 0.12A
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BSP125H6327
Infineon
Trans MOSFET N-CH 600V 0.12A 4Pin SOT-223 T/R
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MOSFET N-CH 600V 120mA SOT-223
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Trans MOSFET N-CH 600V 0.12A Automotive 4Pin(3+Tab) SOT-223 T/R
Infineon
INFINEON BSP125 L6327 Power MOSFET, N Channel, 120mA, 600V, 25Ω, 10V, 1.9V
Infineon
Trans MOSFET N-CH 600V 0.12A 4Pin SOT-223 T/R
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