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BSP170P E6327
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BSP170P E6327 Datasheet PDF (8 Pages)
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BSP170P E6327 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Voltage Rating (DC)
-60.0 V
Current Rating
-1.90 A
Case/Package
SOT-223
Drain to Source Voltage (Vds)
60.0 V
Continuous Drain Current (Ids)
1.90 A
Rise Time
28.0 ns

BSP170P E6327 Size & Package

TYPE
DESCRIPTION
Packaging
Cut Tape (CT)

BSP170P E6327 Documents

Infineon
8 Pages / 0.08 MByte

BSP170 Documents

Infineon
SOT-223P-CH 60V 1.9A
Infineon
Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.
Infineon
BSP170PH6327XTSA1
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Trans MOSFET P-CH 60V 1.9A Automotive 4Pin(3+Tab) SOT-223 T/R
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SOT-223P-CH 60V 1.9A
Infineon
Trans MOSFET P-CH 60V 1.9A 4Pin(3+Tab) SOT-223 T/R
Infineon
MOSFET P-CH 60V 1.9A SOT223
Infineon
Power Field-Effect Transistor, 1.9A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
Infineon
SOT-223P-CH 60V 1.9A
Siemens Semiconductor
SIPMOS Power Transistor (P-Channel Enhancement mode Avalanche rated dv/dt rated)
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