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Part Datasheet Search > MOSFETs > Infineon > BSP170PL6327 Datasheet PDF
BSP170PL6327
$ 0.314

BSP170PL6327 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
4 Pin
Voltage Rating (DC)
-60.0 V
Current Rating
-1.90 A
Case/Package
TO-261
Polarity
P-Channel
Input Capacitance
410 pF
Gate Charge
16.0 nC
Drain to Source Voltage (Vds)
60 V
Continuous Drain Current (Ids)
1.90 A
Input Capacitance (Ciss)
410pF @25V(Vds)
Input Power (Max)
1.8 W

BSP170PL6327 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Cut Tape (CT)

BSP170PL6327 Documents

Infineon
9 Pages / 0.55 MByte
Infineon
9 Pages / 0.5 MByte

BSP170 Documents

Infineon
SOT-223P-CH 60V 1.9A
Infineon
Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.
Infineon
BSP170PH6327XTSA1
Infineon
Trans MOSFET P-CH 60V 1.9A Automotive 4Pin(3+Tab) SOT-223 T/R
Infineon
SOT-223P-CH 60V 1.9A
Infineon
Trans MOSFET P-CH 60V 1.9A 4Pin(3+Tab) SOT-223 T/R
Infineon
MOSFET P-CH 60V 1.9A SOT223
Infineon
Power Field-Effect Transistor, 1.9A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
Infineon
SOT-223P-CH 60V 1.9A
Siemens Semiconductor
SIPMOS Power Transistor (P-Channel Enhancement mode Avalanche rated dv/dt rated)
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