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Part Datasheet Search > MOSFETs > Infineon > BSP295H6327XTSA1 Datasheet PDF
BSP295H6327XTSA1
$ 0.334
BSP295H6327XTSA1 Datasheet PDF (8 Pages)
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BSP295H6327XTSA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
4 Pin
Case/Package
SOT-223-4
Power Rating
1.8 W
Number of Channels
1 Channel
Number of Positions
4 Position
Drain to Source Resistance (on) (Rds)
0.22 Ω
Polarity
N-CH
Power Dissipation
1.8 W
Threshold Voltage
1.1 V
Drain to Source Voltage (Vds)
60 V
Continuous Drain Current (Ids)
1.8A
Rise Time
9.9 ns
Input Capacitance (Ciss)
368pF @25V(Vds)
Input Power (Max)
1.8 W
Fall Time
19 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1.8W (Ta)

BSP295H6327XTSA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
6.5 mm
Size-Width
3.5 mm
Size-Height
1.6 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

BSP295H6327XTSA1 Documents

Infineon
8 Pages / 0.43 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
19 Pages / 0.88 MByte

BSP295H6327 Documents

Infineon
Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
Infineon
Trans MOSFET N-CH 60V 1.8A Automotive T/R
Infineon
SOT-223 N-CH 60V 1.8A
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