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BSP297 E6327
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BSP297 E6327 Datasheet PDF (8 Pages)
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BSP297 E6327 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
4 Pin
Voltage Rating (DC)
200 V
Current Rating
200 mA
Case/Package
SOT-223-4
Power Dissipation
1.8W (Ta)
Input Capacitance
45.0 pF
Gate Charge
1.50 nC
Drain to Source Voltage (Vds)
200 V
Continuous Drain Current (Ids)
200 mA
Input Capacitance (Ciss)
357pF @25V(Vds)
Power Dissipation (Max)
1.8W (Ta)

BSP297 E6327 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tape
Operating Temperature
-55℃ ~ 150℃ (TJ)

BSP297 E6327 Documents

Infineon
8 Pages / 0.56 MByte
Infineon
6 Pages / 0.08 MByte

BSP297 Documents

Infineon
INFINEON BSP297 MOSFET Transistor, N Channel, 600mA, 200V, 2Ω, 10V, 1.4V
Siemens Semiconductor
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)
Siemens AG
SIPMOS® Small-Signal Transistor
Infineon
SOT-223 N-CH 200V 0.66A
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Trans MOSFET N-CH 200V 0.66A Automotive 4Pin(3+Tab) SOT-223 T/R
Infineon
Trans MOSFET N-CH 200V 0.66A Automotive 4Pin(3+Tab) SOT-223 T/R
Infineon
Mosfet n-Ch 200V 660mA Sot-223 - Bsp297 L6327
Infineon
Sipmos(r) Small-signal Transistor: 200V, 0.65A
Infineon
SOT-223 N-CH 200V 0.66A
Infineon
Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, SOT-223, 4 PIN
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