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Part Datasheet Search > MOSFETs > Infineon > BSP315P-E6327 Datasheet PDF
BSP315P-E6327
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BSP315P-E6327 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Voltage Rating (DC)
-60.0 V
Current Rating
-1.17 A
Case/Package
SOT-223-4
Polarity
P-CH
Power Dissipation
1.8W (Ta)
Drain to Source Voltage (Vds)
60 V
Continuous Drain Current (Ids)
1.17 A
Rise Time
9.00 ns
Input Capacitance (Ciss)
160pF @25V(Vds)
Power Dissipation (Max)
1.8W (Ta)

BSP315P-E6327 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Cut Tape (CT)
Operating Temperature
-55℃ ~ 150℃ (TJ)

BSP315P-E6327 Documents

Infineon
9 Pages / 0.2 MByte
Infineon
9 Pages / 0.08 MByte

BSP315 Documents

Siemens Semiconductor
SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)
Infineon
Sipmos Small-signal Transistor
Infineon
SOT-223P-CH 60V 1.17A
Infineon
Transistor: P-MOSFET; unipolar; -50V; -1.17A; 1.8W; SOT223
Infineon
SOT-223P-CH 60V 1.17A
Infineon
p-Ch Mos-Fet 1, 17A 60V Sot223
Infineon
Power Field-Effect Transistor, 1.17A I(D), 60V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
Infineon
SOT-223P-CH 60V 1.17A
Infineon
SOT-223P-CH 60V 1.17A
Infineon
Trans MOSFET P-CH 60V 1.17A Automotive 4Pin(3+Tab) SOT-223 T/R
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