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BSP318S E6327
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BSP318S E6327 Datasheet PDF (9 Pages)
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BSP318S E6327 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
4 Pin
Voltage Rating (DC)
60.0 V
Current Rating
2.60 A
Case/Package
SOT-223-4
Power Dissipation
1.8W (Ta)
Input Capacitance
380 pF
Gate Charge
20.0 nC
Drain to Source Voltage (Vds)
60 V
Continuous Drain Current (Ids)
2.60 A
Input Capacitance (Ciss)
380pF @25V(Vds)
Power Dissipation (Max)
1.8W (Ta)

BSP318S E6327 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)

BSP318S E6327 Documents

Infineon
9 Pages / 0.34 MByte
Infineon
9 Pages / 0.26 MByte
Infineon
9 Pages / 0.07 MByte

BSP318 Documents

Infineon
Sipmos(r) Small-signal Transistor: 60V, 2.6A
Infineon
SOT-223 N-CH 60V 2.6A
Infineon
SOT-223 N-CH 60V 2.6A
Infineon
Trans MOSFET N-CH 60V 2.6A Automotive 4Pin(3+Tab) SOT-223 T/R
Infineon
Mosfet n-Ch 60V 2.6A Sot-223 - Bsp318s L6327
Infineon
Trans MOSFET N-CH 60V 2.6A Automotive 4Pin(3+Tab) SOT-223 T/R
Infineon
Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
Infineon
MOSFET N-CH 60V 2.6A SOT-223
Infineon
SOT-223 N-CH 60V 2.6A
Siemens Semiconductor
SIPMOS Small-Signal Transistor(N channel Enhancement mode Logic Level Avalanche rated)
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