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BSP318SE6327
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BSP318SE6327 Datasheet PDF (9 Pages)
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BSP318SE6327 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
4 Pin
Voltage Rating (DC)
60.0 V
Current Rating
2.60 A
Case/Package
SOT-223
Input Capacitance
380 pF
Gate Charge
20.0 nC
Drain to Source Voltage (Vds)
60.0 V
Continuous Drain Current (Ids)
2.60 A
Rise Time
15 ns
Input Capacitance (Ciss)
300pF @25V(Vds)
Fall Time
15 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1800 mW

BSP318SE6327 Size & Package

TYPE
DESCRIPTION
Packaging
Tape & Reel (TR)

BSP318SE6327 Documents

Infineon
9 Pages / 0.34 MByte

BSP318 Documents

Infineon
Sipmos(r) Small-signal Transistor: 60V, 2.6A
Infineon
SOT-223 N-CH 60V 2.6A
Infineon
SOT-223 N-CH 60V 2.6A
Infineon
Trans MOSFET N-CH 60V 2.6A Automotive 4Pin(3+Tab) SOT-223 T/R
Infineon
Mosfet n-Ch 60V 2.6A Sot-223 - Bsp318s L6327
Infineon
Trans MOSFET N-CH 60V 2.6A Automotive 4Pin(3+Tab) SOT-223 T/R
Infineon
Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
Infineon
MOSFET N-CH 60V 2.6A SOT-223
Infineon
SOT-223 N-CH 60V 2.6A
Siemens Semiconductor
SIPMOS Small-Signal Transistor(N channel Enhancement mode Logic Level Avalanche rated)
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