Web Analytics
Part Datasheet Search > MOSFETs > Infineon > BSP318S H6327 Datasheet PDF
BSP318S H6327
$ 0.218
BSP318S H6327 Datasheet PDF (9 Pages)
View Datasheet
Click page to view the detail

BSP318S H6327 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
4 Pin
Case/Package
SOT-223-4
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
70 mΩ
Power Dissipation
1.8 W
Threshold Voltage
1.2 V
Breakdown Voltage (Drain to Source)
60 V
Rise Time
15 ns
Input Capacitance (Ciss)
300pF @25V(Vds)
Fall Time
15 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
1800 mW

BSP318S H6327 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
6.5 mm
Size-Width
3.5 mm
Size-Height
1.6 mm
Operating Temperature
-55℃ ~ 150℃

BSP318S H6327 Documents

Infineon
9 Pages / 0.4 MByte
Infineon
9 Pages / 0.07 MByte

BSP318 Documents

Infineon
Sipmos(r) Small-signal Transistor: 60V, 2.6A
Infineon
SOT-223 N-CH 60V 2.6A
Infineon
SOT-223 N-CH 60V 2.6A
Infineon
Trans MOSFET N-CH 60V 2.6A Automotive 4Pin(3+Tab) SOT-223 T/R
Infineon
Mosfet n-Ch 60V 2.6A Sot-223 - Bsp318s L6327
Infineon
Trans MOSFET N-CH 60V 2.6A Automotive 4Pin(3+Tab) SOT-223 T/R
Infineon
Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
Infineon
MOSFET N-CH 60V 2.6A SOT-223
Infineon
SOT-223 N-CH 60V 2.6A
Siemens Semiconductor
SIPMOS Small-Signal Transistor(N channel Enhancement mode Logic Level Avalanche rated)
Part Datasheet PDF Search
Loading...
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.

Relate Parts

Relate Documentations: BSP318 Datasheet
BOM Matching Tool
Matching parts
Alternative parts
Warning risks
Computing costs
Upload BOM File
File format: *.xlsx, *.xls, *.csv
Online 3D Gerber Viewer
Modeling in 15s
Preview PCB
40 types of layers
Preflight Risk
Upload Gerber File
Support standard RS-274X file, accept zip rar or 7z