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Part Datasheet Search > BJTs > ON Semiconductor > BSP52T1G Datasheet PDF
BSP52T1G
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BSP52T1G Datasheet PDF (4 Pages)
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BSP52T1G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
4 Pin
Voltage Rating (DC)
80.0 V
Current Rating
1.00 A
Case/Package
TO-261-4
Halogen Free Status
Halogen Free
Output Voltage
80 V
Output Current
1 A
Number of Circuits
4 Circuit
Number of Positions
4 Position
Polarity
NPN
Power Dissipation
800 mW
Breakdown Voltage (Collector to Emitter)
80 V
Thermal Resistance
156℃/W (RθJA)
Continuous Collector Current
1A
hFE Min
2000 @500mA, 10V
Input Power (Max)
800 mW
DC Current Gain (hFE)
1000
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
1250 mW
Input Voltage
5 V

BSP52T1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
6.5 mm
Size-Width
3.5 mm
Size-Height
1.57 mm
Operating Temperature
-65℃ ~ 150℃ (TJ)

BSP52T1G Documents

ON Semiconductor
4 Pages / 0.08 MByte
ON Semiconductor
11 Pages / 0.16 MByte
ON Semiconductor
2 Pages / 0.06 MByte
ON Semiconductor
9 Pages / 0.53 MByte
ON Semiconductor
1 Pages / 0.13 MByte

BSP52T1 Documents

ON Semiconductor
SOT-223 NPN 80V 1A
Motorola
MEDIUM POWER NPN SILICON DARLINGTON TRANSISTOR SURFACE MOUNT
Freescale
MEDIUM POWER PNP SILICON DARLINGTON TRANSISTOR SURFACE MOUNT
ON Semiconductor
SOT-223 NPN 80V 1A
ON Semiconductor
NPN Small−signal Darlington Transistor
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