BSP61H6327XTSA1 Datasheet PDF - Infineon

●If you require a higher current gain value in your circuit, then the PNP BSP61H6327XTSA1 Darlington transistor, developed by Infineon Technologies, is for you. This Darlington transistor array"s maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 1.9@0.5mA@500mA|2.2@1mA@1A V. This product"s maximum continuous DC collector current is 1 A, while its minimum DC current gain is 1000@150mA@10 V|2000@500mA@10V. It has a maximum collector emitter saturation voltage of 1.3@0.55mA@500mA|1.8@1mA@1A V. Its maximum power dissipation is 1500 mW. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.