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BSS123LT1G
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BSS123LT1G Datasheet PDF (5 Pages)
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BSS123LT1G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
100 V
Current Rating
170 mA
Case/Package
SOT-23-3
Power Rating
0.225 W
Halogen Free Status
Halogen Free
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
6 Ω
Polarity
N-Channel
Power Dissipation
225 mW
Threshold Voltage
800 mV
Input Capacitance
20pF @25V
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
100 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
170 mA
Maximum Forward Voltage (Max)
1.3 V
Input Capacitance (Ciss)
20pF @25V(Vds)
Input Power (Max)
225 mW
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
225mW (Ta)

BSS123LT1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
2.9 mm
Size-Width
1.3 mm
Size-Height
0.94 mm
Operating Temperature
-55℃ ~ 150℃

BSS123LT1G Documents

ON Semiconductor
5 Pages / 0.1 MByte
ON Semiconductor
6 Pages / 0.17 MByte
ON Semiconductor
7 Pages / 0.6 MByte
ON Semiconductor
4 Pages / 0.06 MByte
ON Semiconductor
1 Pages / 0.15 MByte

BSS123LT1 Documents

ON Semiconductor
Trans MOSFET N-CH 100V 0.17A 3Pin SOT-23 T/R
Fairchild
MOSFET N-CH 100V 170mA SOT-23
ON Semiconductor
SOT-23 N-CH 100V 0.17A
Leshan Radio
Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN
ON Semiconductor
Power MOSFET 170 mAmps/ 100 Volts
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