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BSS138LT1G Datasheet PDF - ON Semiconductor

Manufacturer:

ON Semiconductor

Category:

MOSFETs

Case Package:

SOT-23-3

Description:

SOT-23 N-CH 50V 0.2A

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Documentation:

BSS138LT1G Datasheet (5 Pages)

Package Outline Dimension on5 Page

Package Footprint Pad Layout on5 Page

Part Numbering System on1 Page 5 Page

BSS138LT1G Datasheet PDF (5 Pages)

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BSS138LT1G Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Voltage Rating (DC)

50.0 V

Current Rating

200 mA

Case/Package

SOT-23-3

Power Rating

0.225 W

Halogen Free Status

Halogen Free

Number of Channels

1 Channel

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

3.5 Ω

Polarity

N-Channel

Power Dissipation

225 mW

Threshold Voltage

1.5 V

Input Capacitance

40pF @25V

Drain to Source Voltage (Vds)

50 V

Breakdown Voltage (Drain to Source)

50 V

Breakdown Voltage (Gate to Source)

±20.0 V

Continuous Drain Current (Ids)

200 mA

Input Capacitance (Ciss)

50pF @25V(Vds)

Input Power (Max)

225 mW

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

225 mW

View Datasheet >

BSS138LT1G Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Size-Length

2.9 mm

Size-Width

1.3 mm

Size-Height

0.94 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

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BSS138LT1G Environmental

BSS138LT1G Export Classifications

BSS138LT1G Function Overview

BSS138LT1G Documents

BSS138LT1G Datasheet

ON Semiconductor

5 Pages / 0.1 MByte

BSS138LT1G Other Datasheet PDF

ON Semiconductor

14 Pages / 0.05 MByte

BSS138LT1G Notice File

ON Semiconductor

7 Pages / 0.6 MByte

BSS138LT1G Other References

ON Semiconductor

1 Pages / 0.15 MByte

BSS138LT1 Documents

BSS138LT1 Datasheet PDF

ON Semiconductor

SOT-23 N-CH 50V 0.2A

BSS138LT1 Datasheet PDF

Motorola

Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, CASE 318-08, 3 PIN

BSS138LT1 Datasheet PDF

Leshan Radio

Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

BSS138LT1G Datasheet PDF

ON Semiconductor

SOT-23 N-CH 50V 0.2A

BSS138LT1G Datasheet PDF

Leshan Radio

Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, MINIATURE PACKAGE-3

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