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BSV52LT1G
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BSV52LT1G Datasheet PDF (3 Pages)
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BSV52LT1G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
400 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
12.0 V
Current Rating
200 mA
Case/Package
SOT-23-3
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
225 mW
Gain Bandwidth Product
400 MHz
Breakdown Voltage (Collector to Emitter)
12 V
Continuous Collector Current
0.1A
hFE Min
40 @10mA, 1V
Input Power (Max)
225 mW
DC Current Gain (hFE)
25
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300 mW

BSV52LT1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
3.04 mm
Size-Width
2.64 mm
Size-Height
1.11 mm
Operating Temperature
-55℃ ~ 150℃

BSV52LT1G Documents

ON Semiconductor
3 Pages / 0.1 MByte
ON Semiconductor
36 Pages / 0.15 MByte
ON Semiconductor
5 Pages / 0.31 MByte

BSV52LT1 Documents

ON Semiconductor
SOT-23 NPN 12V 0.1A
Motorola
Switching Transistor(NPN)
ON Semiconductor
SOT-23 NPN 12V 0.1A
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