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Part Datasheet Search > MOSFETs > Infineon > BSZ100N06NS Datasheet PDF
BSZ100N06NS
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BSZ100N06NS Datasheet PDF (9 Pages)
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BSZ100N06NS Specifications

TYPE
DESCRIPTION
Number of Pins
8 Pin
Case/Package
PG-TSDSON-8
Drain to Source Resistance (on) (Rds)
10 mΩ
Polarity
N-CH
Power Dissipation
2.1 W
Drain to Source Voltage (Vds)
60 V
Continuous Drain Current (Ids)
40A
Rise Time
2 ns
Input Capacitance (Ciss)
860pF @30V(Vds)
Fall Time
2 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2100 mW

BSZ100N06NS Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
3.3 mm
Size-Width
3.3 mm
Size-Height
1.1 mm
Operating Temperature
-55℃ ~ 150℃

BSZ100N06NS Documents

Infineon
9 Pages / 0.67 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte

BSZ100N06 Documents

Infineon
TSDSON N-CH 60V 11A
Infineon
TSDSON N-CH 60V 40A
Infineon
TSDSON N-CH 60V 40A
Infineon
Trans MOSFET N-CH 60V 11A 8Pin TSDSON
Infineon
Trans MOSFET N-CH 60V 11A 8Pin TSDSON T/R
Infineon
TSDSON N-CH 60V 11A
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