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Part Datasheet Search > MOSFETs > Infineon > BSZ150N10LS3 G Datasheet PDF
BSZ150N10LS3 G
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BSZ150N10LS3 G Datasheet PDF (9 Pages)
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BSZ150N10LS3 G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
TSDSON-8
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
13 mΩ
Power Dissipation
63 W
Threshold Voltage
1.1 V
Breakdown Voltage (Drain to Source)
100 V
Rise Time
4.6 ns
Input Capacitance (Ciss)
1900pF @50V(Vds)
Fall Time
3.9 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
2100 mW

BSZ150N10LS3 G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
3.3 mm
Size-Width
3.3 mm
Size-Height
1.1 mm
Operating Temperature
-55℃ ~ 150℃

BSZ150N10LS3 G Documents

Infineon
9 Pages / 0.47 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte

BSZ150N10LS3 Documents

Infineon
TSDSON N-CH 100V 8A
Infineon
Trans MOSFET N-CH 100V 8A 8Pin TSDSON
Infineon
Trans MOSFET N-CH 100V 8A 8Pin TSDSON
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