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Part Datasheet Search > MOSFETs > Infineon > BSZ150N10LS3GATMA1 Datasheet PDF
BSZ150N10LS3GATMA1
$ 0.706
BSZ150N10LS3GATMA1 Datasheet PDF (9 Pages)
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BSZ150N10LS3GATMA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
PG-TSDSON-8
Power Rating
63 W
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.013 Ω
Polarity
N-Channel
Power Dissipation
63 W
Threshold Voltage
1.7 V
Input Capacitance
1900 pF
Drain to Source Voltage (Vds)
100 V
Continuous Drain Current (Ids)
8A
Rise Time
4.6 ns
Input Capacitance (Ciss)
2500pF @50V(Vds)
Input Power (Max)
2.1 W
Fall Time
3.9 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2.1W (Ta), 63W (Tc)

BSZ150N10LS3GATMA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)

BSZ150N10LS3GATMA1 Documents

Infineon
9 Pages / 0.47 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
40 Pages / 0.46 MByte
Infineon
37 Pages / 2.01 MByte

BSZ150N10LS3 Documents

Infineon
TSDSON N-CH 100V 8A
Infineon
Trans MOSFET N-CH 100V 8A 8Pin TSDSON
Infineon
Trans MOSFET N-CH 100V 8A 8Pin TSDSON
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