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Part Datasheet Search > MOSFETs > Infineon > BSZ160N10NS3 G Datasheet PDF
BSZ160N10NS3 G
$ 0.372
BSZ160N10NS3 G Datasheet PDF (9 Pages)
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BSZ160N10NS3 G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
PG-TSDSON
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.014 Ω
Polarity
N-Channel
Power Dissipation
63 W
Threshold Voltage
2.8 V
Drain to Source Voltage (Vds)
100 V
Rise Time
10 ns
Input Capacitance (Ciss)
1300pF @50V(Vds)
Input Power (Max)
63 W
Fall Time
5 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
63 W

BSZ160N10NS3 G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
3.4 mm
Size-Width
3.4 mm
Size-Height
1.1 mm
Operating Temperature
-55℃ ~ 150℃

BSZ160N10NS3 G Documents

Infineon
9 Pages / 0.44 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte

BSZ160N10NS3 Documents

Infineon
MOSFET N-Ch 100V 40A TSDSON-8 OptiMOS 3
Infineon
TSDSON N-CH 100V 8A
Infineon
Trans MOSFET N-CH 100V 8A 8Pin TSDSON T/R
Infineon
Power Field-Effect Transistor, 8A I(D), 100V, 0.016Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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