BTS640S2GATMA1 Datasheet PDF - Infineon

●The BTS640S2G is a N-channel high-side vertical Power FET Switch with charge pump, ground referenced CMOS compatible input and diagnostic feedback and proportional sense of load current, monolithically integrated in smart SIPMOS® technology. It provides embedded protective functions, under-voltage and overvoltage shutdown with auto-restart and hysteresis.

● Short-circuit protection

● Current limitation

● Proportional load current sense

● CMOS compatible input

● Open drain diagnostic output

● Fast demagnetization of inductive loads

● Overload protection

● Thermal shutdown

● Overvoltage protection including load dump

● Reverse battery protection

● Loss of ground and loss of VBB protection

● Electrostatic discharge (ESD) protection

● High voltage capability

● Benchmark energy robustness

●ESD sensitive device, take proper precaution while handling the device.