BTS7960P Datasheet PDF - Infineon

●Overview

●The BTS 7960is part of the NovalithICfamily containing three separate chips in one package: One p-channel highside MOSFET and one n-channel lowside MOSFET together with a driver IC, forming a fully integrated high current half-bridge. All three chips are mounted on one common leadframe, using the chip on chip and chip by chip technology. The power switches utilize vertical MOS technologies to ensure optimum on state resistance. Due to the p-channel highside switch the need for a charge pump is eliminated thus minimizing EMI. Interfacing to a microcontroller is made easy by the integrated driver IC which features logic level inputs, diagnosis with current sense, slew rate adjustment, dead time generation and protection against overtemperature,

●overvoltage, undervoltage, overcurrent and short circuit. The BTS 7960 can be combined with other BTS 7960 to form H-bridge and 3-phase drive configurations.

●Basic Features

●• Path resistance of typ. 16 mΩ@25°C

●• Low quiescent current of typ. 7µA @ 25°C

●• PWM capability of up to 25 kHz combined with active freewheeling

●• Switched mode current limitation for reduced power dissipation in overcurrent

●• Current limitation level of 43 A typ.

●• Status flag diagnosis with current sense capability

●• Overtemperature shut down with latch behaviour

●• Overvoltage lock out

●• Undervoltage shut down

●• Driver circuit with logic level inputs

●• Adjustable slew rates for optimized EMI