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Part Datasheet Search > BJTs > ON Semiconductor > BU323ZG Datasheet PDF
BU323ZG
$ 1.919
BU323ZG Datasheet PDF (8 Pages)
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BU323ZG Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
35.0 V
Current Rating
10.0 A
Case/Package
TO-247-3
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
150 W
Breakdown Voltage (Collector to Emitter)
350 V
Continuous Collector Current
10A
hFE Min
500 @5A, 4.6V
hFE Max
3400
Input Power (Max)
150 W
DC Current Gain (hFE)
500
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
150000 mW

BU323ZG Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
15.2 mm
Size-Width
4.9 mm
Size-Height
16.2 mm
Operating Temperature
-65℃ ~ 175℃ (TJ)

BU323ZG Documents

ON Semiconductor
8 Pages / 0.12 MByte
ON Semiconductor
10 Pages / 0.23 MByte
ON Semiconductor
2 Pages / 0.05 MByte
ON Semiconductor
5 Pages / 0.45 MByte

BU323 Documents

ON Semiconductor
NPN Darlington Bipolar Power Transistor, TO-247, 30-TUBE
Motorola
10A, 350V, NPN, Si, POWER TRANSISTOR, TO-218
Intersil
BU323
Solitron Devices
Transistor
Semelab
10A, 400V, NPN, Si, POWER TRANSISTOR, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN
Harris
Transistor
Inchange Semiconductor
Transistor
TT Electronics Resistors
Power Bipolar Transistor, 10A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-3, 2 PIN
ON Semiconductor
TO-247 NPN 350V 10A
ON Semiconductor
TO-247 NPN 350V 10A
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