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Part Datasheet Search > BJTs > ON Semiconductor > BU406G Datasheet PDF
BU406G
$ 0.66
BU406G Datasheet PDF (4 Pages)
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BU406G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
10 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
200 V
Current Rating
7.00 A
Case/Package
TO-220-3
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
60 W
Breakdown Voltage (Collector to Emitter)
200 V
Continuous Collector Current
7A
Input Power (Max)
60 W
DC Current Gain (hFE)
10
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
60000 mW

BU406G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Size-Width
4.82 mm
Operating Temperature
-65℃ ~ 150℃ (TJ)

BU406G Documents

ON Semiconductor
4 Pages / 0.18 MByte
ON Semiconductor
5 Pages / 0.32 MByte
ON Semiconductor
2 Pages / 0.02 MByte
ON Semiconductor
5 Pages / 0.15 MByte
ON Semiconductor
1 Pages / 0.13 MByte

BU406 Documents

ON Semiconductor
TO-220-3 NPN 200V 7A
Fairchild
Trans GP BJT NPN 200V 7A 3Pin(3+Tab) TO-220AB Bulk
ST Microelectronics
Trans GP BJT NPN 200V 7A 3Pin(3+Tab) TO-220 Tube
Multicomp
MULTICOMP BU406 Bipolar (BJT) Single Transistor, NPN, 200V, 10MHz, 60W, 7A, 30
Motorola
7 AMPERES NPN SILICON POWER TRANSISTORS 60W 150 and 200 VOLTS
Central Semiconductor
Power Transistors
Bourns J.W. Miller
NPN SILICON POWER TRANSISTORS
Freescale
TRANSISTOR NPN SW TO-220
Continental Device
NPN PLASTIC POWER TRANSISTORS
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