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Part Datasheet Search > ST Microelectronics > BU508DFI Datasheet PDF
BU508DFI
$ 0.262
BU508DFI Datasheet PDF (6 Pages)
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BU508DFI Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Case/Package
SOT-93-3
Polarity
NPN
Power Dissipation
50 W
Breakdown Voltage (Collector to Emitter)
700 V
Continuous Collector Current
8A
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃

BU508DFI Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tube

BU508DFI Documents

ST Microelectronics
6 Pages / 0.4 MByte
ST Microelectronics
6 Pages / 0.39 MByte

BU508 Documents

Mospec
POWER TRANSISTORS(5A,1500V,125W)
ON Semiconductor
8A, 700V, NPN, Si, POWER TRANSISTOR, TO-218AC, CASE 340-02, 3 PIN
Thomas & Betts
Thomas & Betts BU508 3" Non-metallic Insulated Bushing Steel City BU508
Samsung
Power Bipolar Transistor, 5A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
UTC
Power Bipolar Transistor, 8A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC, TO-3PML, 3 PIN
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