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Part Datasheet Search > BJTs > ON Semiconductor > BUL45G Datasheet PDF
BUL45G
$ 0.412
BUL45G Datasheet PDF (8 Pages)
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BUL45G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
12 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
400 V
Current Rating
5.00 A
Case/Package
TO-220-3
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
75 W
Breakdown Voltage (Collector to Emitter)
400 V
Continuous Collector Current
5A
hFE Min
14 @300mA, 5V
Input Power (Max)
75 W
DC Current Gain (hFE)
34
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
75000 mW

BUL45G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tube
Material
Silicon
Size-Width
4.82 mm
Operating Temperature
-65℃ ~ 150℃ (TJ)

BUL45G Documents

ON Semiconductor
8 Pages / 0.18 MByte
ON Semiconductor
9 Pages / 0.35 MByte
ON Semiconductor
56 Pages / 0.1 MByte
ON Semiconductor
1 Pages / 0.13 MByte

BUL45 Documents

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Semelab
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Continental Device
Power Bipolar Transistor, 5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
Inchange Semiconductor
Silicon NPN Power Transistors
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TO-220AB NPN 400V 5A
ON Semiconductor
TO-220AB NPN 400V 5A
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TO-220-3 NPN 400V 5A
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