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Part Datasheet Search > BJTs > ON Semiconductor > BUV27G Datasheet PDF
BUV27G
$ 0.287
BUV27G Datasheet PDF (4 Pages)
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BUV27G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
120 V
Current Rating
12.0 A
Case/Package
TO-220-3
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
70 W
Breakdown Voltage (Collector to Emitter)
120 V
Continuous Collector Current
12A
Input Power (Max)
70 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
70000 mW

BUV27G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Size-Length
10.53 mm
Size-Width
4.83 mm
Size-Height
15.75 mm
Operating Temperature
-65℃ ~ 150℃ (TJ)

BUV27G Documents

ON Semiconductor
4 Pages / 0.04 MByte
ON Semiconductor
15 Pages / 0.72 MByte
ON Semiconductor
2 Pages / 0.02 MByte
ON Semiconductor
5 Pages / 0.15 MByte

BUV27 Documents

ST Microelectronics
Trans GP BJT NPN 120V 12A 3Pin(3+Tab) TO-220 Tube
ON Semiconductor
TO-220-3 NPN 120V 12A
Semelab
12A, 120V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220, 3 PIN
NXP
13A, 120V, NPN, Si, POWER TRANSISTOR, TO-220AB
TT Electronics Resistors
Power Bipolar Transistor, 12A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
Comset Semiconductors
Transistor NPN BUV27 COMSET RoHS Ampere=12V=120 TO220
Inchange Semiconductor
Silicon NPN Power Transistors
Usha
Transistor
Philips
Transistor,
Iskra
Transistor
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