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Part Datasheet Search > MOSFETs > Infineon > BUZ73A H3046 Datasheet PDF
BUZ73A H3046
$ 1.566

BUZ73A H3046 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-220-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
600 mΩ
Power Dissipation
40 W
Drain to Source Voltage (Vds)
200 V
Breakdown Voltage (Drain to Source)
200 V
Rise Time
40 nS
Input Capacitance (Ciss)
530pF @25V(Vds)
Input Power (Max)
40 W
Fall Time
30 nS
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
40W (Tc)

BUZ73A H3046 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tube
Size-Length
10 mm
Size-Width
4.4 mm
Size-Height
15.65 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

BUZ73A H3046 Documents

Infineon
10 Pages / 0.3 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
10 Pages / 1.66 MByte

BUZ73 Documents

Infineon
MOSFET N-CH 200V 7A TO-220AB
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Trans MOSFET N-CH 200V 5.5A 3Pin(3+Tab) TO-220
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Trans MOSFET N-CH 200V 7A 3Pin(3+Tab) TO-220
Infineon
TO-220AB N-CH 200V 5.5A
Infineon
TO-220 N-CH 200V 5.5A
Infineon
MOSFET N-CH 200V 5.5A TO220-3
Intersil
MOSFET, Transistors, Max. Drain/Source Voltage Of Fet 200V, Maximum Pulsed Drain Current For MOSFET 5.80 Ampere, Maximum On State Resistance 0.6Ω
Infineon
TO-220 N-CH 200V 5.5A
Infineon
MOSFET N-CH 200V 5.5A TO220-3
Infineon
MOSFET N-CH 200V 5.5 TO220-3
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