CPC5602C Datasheet PDF - IXYS Semiconductor

●Description

●The CPC5602C is an “N” channel depletion mode Field Effect Transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a highly reliable device particularly in difficult application environments such as telecommunications.

●Features

●• Low on resistance 10 ohms

●• High input impedance

●• Low input and output leakage

●• Small package size SOT-223

●• PC Card (PCMCIA) Compatible

●• PCB Space and Cost Savings

●Applications

●• Support Component for LITELINK™

●Data Access Arrangement (DAA)

●• Normally-on switch

●• Telecom

●• Constant Current Source