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CPV363M4F Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

IGBTs

Case Package:

SIP-19

Description:

VISHAY CPV363M4F IGBT Array & Module Transistor, N Channel, 16A, 600V, 36W, 600V, SIP

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Product Pictures

Documentation:

CPV363M4F Datasheet (10 Pages)

Package Outline Dimension on10 Page

CPV363M4F Datasheet PDF (10 Pages)

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CPV363M4F Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

13 Pin

Case/Package

SIP-19

Polarity

N-Channel

Power Dissipation

36 W

Breakdown Voltage (Collector to Emitter)

600 V

Input Capacitance (Cies)

1.1nF @30V

Input Power (Max)

36 W

Operating Temperature (Max)

150 ℃

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CPV363M4F Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Obsolete

Operating Temperature

-40℃ ~ 150℃ (TJ)

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CPV363M4F Environmental

CPV363M4F Function Overview

CPV363M4F Documents

CPV363M4F Datasheet

Vishay Semiconductor

10 Pages / 0.26 MByte

CPV363M4F Other Datasheet PDF

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CPV363M4K Datasheet PDF

International Rectifier

600V UltraFast 8-25kHz 3-Phase Bridge IGBT in a IMS-2 package

CPV363M4U Datasheet PDF

International Rectifier

Igbt Sip Module 600V 6.8A Ims-2

CPV363M4UPBF Datasheet PDF

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CPV363M4KPBF Datasheet PDF

International Rectifier

MOD IGBT 3PHASE INV 600V SIP

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