CSD16340Q3 Datasheet PDF - TI

●This 25 V, 3.8 mΩ, 3.3 × 3.3 mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion and optimized for 5 V gate drive applications.

● Optimized for 5 V Gate Drive

● Resistance Rated at VGS =2.5 V

● Ultra-Low Qg and Qgd

● Low Thermal Resistance

● Avalanche Rated

● Pb Free Terminal Plating

● RoHS Compliant

● Halogen Free

● SON 3.3-mm × 3.3-mm Plastic

●Package

● APPLICATIONS

● Point of Load Synchronous

●Buck Converter for Applications

●in Networking, Telecom, and

●Computing Systems

● Optimized for Control

●or Synchronous FET

●Applications