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Part Datasheet Search > MOSFETs > TI > CSD19532KTTT Datasheet PDF
CSD19532KTTT
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CSD19532KTTT Datasheet PDF (12 Pages)
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CSD19532KTTT Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
4 Pin
Case/Package
TO-263-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
5.6 mΩ
Polarity
N-CH
Power Dissipation
250 W
Threshold Voltage
2.6 V
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
100 V
Continuous Drain Current (Ids)
200A
Rise Time
3 ns
Input Capacitance (Ciss)
5060pF @50V(Vds)
Fall Time
2 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
250W (Tc)

CSD19532KTTT Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
9.25 mm
Size-Height
4.7 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

CSD19532KTTT Documents

TI
12 Pages / 0.35 MByte

CSD19532 Documents

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VSON-CLIP N-CH 100V 100A
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