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Part Datasheet Search > MOSFETs > TI > CSD19532Q5B Datasheet PDF
CSD19532Q5B
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CSD19532Q5B Datasheet PDF (14 Pages)
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CSD19532Q5B Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
VSON-Clip-8
Number of Channels
1 Channel
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.004 Ω
Polarity
N-Channel
Power Dissipation
3.1 W
Threshold Voltage
2.6 V
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
100 V
Continuous Drain Current (Ids)
100A
Rise Time
6 ns
Input Capacitance (Ciss)
4810pF @50V(Vds)
Fall Time
6 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3.1W (Ta), 195W (Tc)

CSD19532Q5B Size & Package

TYPE
DESCRIPTION
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
6 mm
Size-Width
5 mm
Size-Height
1 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

CSD19532Q5B Documents

TI
14 Pages / 0.81 MByte
TI
13 Pages / 0.84 MByte
TI
18 Pages / 1.33 MByte
TI
8 Pages / 0.41 MByte

CSD19532Q5 Documents

TI
VSON-CLIP N-CH 100V 100A
TI
Trans MOSFET N-CH Si 100V 100A 8Pin VSON-CLIP EP T/R
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