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CSD19538Q2T
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CSD19538Q2T Datasheet PDF (14 Pages)
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CSD19538Q2T Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
6 Pin
Case/Package
WSON-FET-6
Number of Channels
1 Channel
Number of Positions
6 Position
Drain to Source Resistance (on) (Rds)
0.049 Ω
Polarity
N-Channel
Power Dissipation
23 W
Threshold Voltage
3.2 V
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
100 V
Continuous Drain Current (Ids)
14.4A
Rise Time
3 ns
Input Capacitance (Ciss)
349pF @50V(Vds)
Fall Time
2 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2500 mW

CSD19538Q2T Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
2 mm
Size-Width
2 mm
Size-Height
0.75 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

CSD19538Q2T Documents

TI
14 Pages / 0.38 MByte
TI
25 Pages / 1.94 MByte

CSD19538Q2 Documents

TI
WSON N-CH 100V 14.4A
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