CY62136VLL Datasheet PDF - Cypress Semiconductor

●Functional Description[1]

●The CY62136V is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current.

●This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE HIGH). The input/output pins (I/O0 through I/O 15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW).

●Features

●• High speed

●   — 55 ns

●• Temperature Ranges

●   — Industrial: –40°C to 85°C

●   — Automotive: –40°C to 125°C

●• Wide voltage range

●   — 2.7V – 3.6V

●• Ultra-low active, standby power

●• Easy memory expansion with CE and OE features

●• TTL-compatible inputs and outputs

●• Automatic power-down when deselected

●• CMOS for optimum speed/power

●• Available in a Pb-free and non Pb-free 44-pin TSOP

●   Type II (forward pinout) and 48-ball FBGA packages