CY62148EV30LL-45ZSXI Datasheet PDF - Cypress Semiconductor

●The CY62148EV30LL-45ZSXI is a 4MB high performance CMOS Static Random Access Memory (SRAM) organized as 512K words by 8-bit. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption. Placing the device into standby mode reduces power consumption by more than 99% when deselected. The eight input and output pins are placed in a high impedance state when the device is deselected, the outputs are disabled or during a write operation. To write to the device, take chip enable and write enable inputs LOW. Data on the eight I/O pins is then written into the location specified on the address pins. To read from the device, take chip enable and output enable LOW while forcing write enable HIGH.

● Very high speed - 45ns

● Pin compatible with CY62148DV30

● Ultralow standby power

● Ultralow active power

● Easy memory expansion with CE and OE

● Automatic power down when deselected

● CMOS for optimum speed/power