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Part Datasheet Search > BJTs > ON Semiconductor > D44H11TU Datasheet PDF
D44H11TU
$ 5.688
D44H11TU Datasheet PDF (4 Pages)
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D44H11TU Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
50 MHz
Number of Pins
3 Pin
Case/Package
TO-220-3
Number of Positions
3 Position
Power Dissipation
1.67 W
Breakdown Voltage (Collector to Emitter)
80 V
hFE Min
40 @4A, 1V
Input Power (Max)
60 W
DC Current Gain (hFE)
60
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1670 mW

D44H11TU Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Size-Length
10.67 mm
Size-Width
4.83 mm
Size-Height
16.51 mm
Operating Temperature
-55℃ ~ 150℃

D44H11TU Documents

ON Semiconductor
4 Pages / 0.23 MByte
ON Semiconductor
20 Pages / 0.87 MByte
ON Semiconductor
2 Pages / 0.1 MByte
ON Semiconductor
13 Pages / 0.34 MByte
ON Semiconductor
19 Pages / 0.99 MByte

D44H11 Documents

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Multicomp
MULTICOMP D44H11 Bipolar (BJT) Single Transistor, General Purpose, NPN, 80V, 15MHz, 50W, 10A, 60 hFE
Mospec
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Central Semiconductor
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Rectron Semiconductor
10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 60,80 VOLTS
Samsung
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