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D45VH10G
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D45VH10G Datasheet PDF (6 Pages)
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D45VH10G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
50 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
-80.0 V
Current Rating
-15.0 A
Case/Package
TO-220-3
Number of Positions
3 Position
Polarity
PNP, P-Channel
Power Dissipation
83 W
Gain Bandwidth Product
50 MHz
Breakdown Voltage (Collector to Emitter)
80 V
Thermal Resistance
62.5℃/W (RθJC)
Continuous Collector Current
15A
hFE Min
20 @4A, 1V
Input Power (Max)
83 W
DC Current Gain (hFE)
35
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
83 W

D45VH10G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Size-Length
10.28 mm
Size-Width
4.83 mm
Size-Height
15.75 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

D45VH10G Documents

ON Semiconductor
6 Pages / 0.2 MByte
ON Semiconductor
6 Pages / 0.07 MByte
ON Semiconductor
2 Pages / 0.02 MByte
ON Semiconductor
5 Pages / 0.09 MByte
ON Semiconductor
5 Pages / 0.15 MByte
ON Semiconductor
1 Pages / 0.13 MByte

D45VH10 Documents

ON Semiconductor
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New Jersey Semiconductor
Trans GP BJT PNP 80V 15A 3Pin(3+Tab) TO-220AB Rail0
Inchange Semiconductor
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Harris
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Iskra
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Harting Technology Group
ON Semiconductor
TO-220AB PNP 80V 15A
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