DRV8323RHRGZR Datasheet PDF - TI

●The DRV832x family of devices are integrated gate drivers for three-phase applications. The devices provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV832x generates the proper gate drive voltages using an integrated charge pump for the high-side MOSFETs and a linear regulator for the low-side MOSFETs. The smart gate drive architecture supports up to 1-A source and 2-A sink peak gate drive current capability. The DRV832x can operate from a single power supply and supports a wide input supply range of 6 to 50-V for the gate driver and 4 to 60-V for the optional buck regulator.

●The 6x, 3x, 1x, and independent input PWM modes allow for simple interfacing to controller circuits. Gate drive and device configuration settings are highly configurable through a SPI or hardware (H/W) interface. The DRV8323 and DRV8323R devices have three, integrated low-side shunt amplifiers that allow bidirectional current sensing on all three phases of the drive stage. The DRV8320R and DRV8323R devices integrate a 600-mA buck regulator.

●A low-power sleep mode is provided to achieve low quiescent current draw by shutting down most of the internal circuitry. Internal protection functions are provided for undervoltage lockout, charge pump fault, MOSFET overcurrent, MOSFET short circuit, phase node short to battery, phase node short to ground, open load detection, gate driver fault, and over temperature. Fault conditions are indicated on the nFAULT pin with details through the device registers for the SPI device variant.