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Part Datasheet Search > BJTs > ON Semiconductor > DTA114YET1G Datasheet PDF
DTA114YET1G
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DTA114YET1G Datasheet PDF (12 Pages)
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DTA114YET1G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
-50.0 V
Current Rating
-100 mA
Case/Package
SC-75-3
Halogen Free Status
Halogen Free
Polarity
PNP
Power Dissipation
0.3 W
Breakdown Voltage (Collector to Emitter)
50 V
Continuous Collector Current
100mA
hFE Min
80 @5mA, 10V
Input Power (Max)
200 mW
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300 mW

DTA114YET1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃

DTA114YET1G Documents

ON Semiconductor
12 Pages / 0.1 MByte
ON Semiconductor
15 Pages / 0.09 MByte
ON Semiconductor
2 Pages / 0.02 MByte
ON Semiconductor
14 Pages / 0.21 MByte

DTA114YET1 Documents

ON Semiconductor
Trans Digital BJT PNP 50V 100mA 300mW 3Pin SOT-416 T/R
Motorola
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SC-75, 3 PIN
Leshan Radio
Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon,
ON Semiconductor
SOT-416 PNP 50V 100mA
Leshan Radio
Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon,
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