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Part Datasheet Search > BJTs > ROHM Semiconductor > EMX1FHAT2R Datasheet PDF
EMX1FHAT2R
$ 0.068
EMX1FHAT2R Datasheet PDF (8 Pages)
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EMX1FHAT2R Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
6 Pin
Case/Package
SOT-563-6
Power Rating
0.15 W
Number of Positions
6 Position
Polarity
NPN
Power Dissipation
150 mW
Breakdown Voltage (Collector to Emitter)
50 V
hFE Min
120 @1mA, 6V
hFE Max
560
Input Power (Max)
150 mW
DC Current Gain (hFE)
120
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
150 mW

EMX1FHAT2R Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Operating Temperature
150℃ (TJ)

EMX1FHAT2R Documents

ROHM Semiconductor
8 Pages / 1.3 MByte
ROHM Semiconductor
6 Pages / 1.08 MByte

EMX1FHAT2 Documents

ROHM Semiconductor
ROHM EMX1FHAT2R Bipolar Transistor Array, Dual NPN, 50V, 150mW, 150mA, 120 hFE, SOT-563
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