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Part Datasheet Search > MOSFETs > ON Semiconductor > FCB36N60NTM Datasheet PDF
FCB36N60NTM
$ 6.467
FCB36N60NTM Datasheet PDF (8 Pages)
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FCB36N60NTM Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.081 Ω
Power Dissipation
312 W
Threshold Voltage
2 V
Drain to Source Voltage (Vds)
600 V
Rise Time
22 ns
Input Capacitance (Ciss)
3595pF @100V(Vds)
Input Power (Max)
312 W
Fall Time
4 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
312 W

FCB36N60NTM Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
10.67 mm
Size-Width
9.65 mm
Size-Height
4.83 mm
Operating Temperature
-55℃ ~ 150℃

FCB36N60NTM Documents

ON Semiconductor
8 Pages / 0.61 MByte
ON Semiconductor
10 Pages / 0.71 MByte
ON Semiconductor
7 Pages / 0.87 MByte

FCB36N60 Documents

Fairchild
FAIRCHILD SEMICONDUCTOR FCB36N60NTM Power MOSFET, N Channel, 36A, 600V, 0.081Ω, 10V, 2V
ON Semiconductor
Mosfet, n Channel, 600V, 0.081Ω, 36A, To-263-3
Fairchild
N-Channel SupreMOS MOSFET 600V, 25A, 125m
ON Semiconductor
Power Field-Effect Transistor, 36A I(D), 600V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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