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FCD850N80Z Datasheet PDF - ON Semiconductor

Manufacturer:

ON Semiconductor

Case Package:

TO-252-3

Description:

N-Channel SuperFET® II MOSFET

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FCD850N80Z Datasheet PDF

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FCD850N80Z Specifications

TYPE

DESCRIPTION

Number of Pins

3 Pin

Case/Package

TO-252-3

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

0.71 Ω

Power Dissipation

75 W

Threshold Voltage

4.5 V

Drain to Source Voltage (Vds)

800 V

Rise Time

10 ns

Input Capacitance (Ciss)

1315pF @100V(Vds)

Fall Time

4.5 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

75000 mW

FCD850N80Z Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Operating Temperature

-55℃ ~ 150℃ (TJ)

FCD850N80Z Environmental

FCD850N80Z Function Overview

FCD850N80Z Documents

FCD850N80Z Other Datasheet PDF

ON Semiconductor

0 Pages / 1.05 MByte

FCD850N80Z Notice File

ON Semiconductor

11 Pages / 0.67 MByte

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FCD850N80Z Datasheet PDF

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N-Channel SuperFET® II MOSFET

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