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FCD850N80Z
$ 1.208
FCD850N80Z Datasheet PDF
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FCD850N80Z Specifications

TYPE
DESCRIPTION
Number of Pins
3 Pin
Case/Package
TO-252-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.71 Ω
Power Dissipation
75 W
Threshold Voltage
4.5 V
Drain to Source Voltage (Vds)
800 V
Rise Time
10 ns
Input Capacitance (Ciss)
1315pF @100V(Vds)
Fall Time
4.5 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
75000 mW

FCD850N80Z Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)

FCD850N80Z Documents

ON Semiconductor
0 Pages / 1.05 MByte
ON Semiconductor
11 Pages / 0.67 MByte

FCD850N80 Documents

ON Semiconductor
N-Channel SuperFET® II MOSFET
Fairchild
Trans MOSFET N-CH 800V 6A 3Pin(2+Tab) DPAK T/R
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