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Part Datasheet Search > MOSFETs > Fairchild > FCP190N60E Datasheet PDF
FCP190N60E
$ 1.864

FCP190N60E Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.16 Ω
Polarity
N-Channel
Power Dissipation
208 W
Threshold Voltage
2.5 V
Drain to Source Voltage (Vds)
600 V
Continuous Drain Current (Ids)
20.6A
Input Capacitance (Ciss)
3175pF @25V(Vds)
Input Power (Max)
208 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
208W (Tc)

FCP190N60E Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.67 mm
Size-Width
4.83 mm
Size-Height
9.4 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

FCP190N60E Documents

Fairchild
10 Pages / 0.83 MByte
Fairchild
11 Pages / 0.83 MByte

FCP190N60 Documents

Fairchild
FAIRCHILD SEMICONDUCTOR FCP190N60 Power MOSFET, N Channel, 20.2A, 600V, 0.17Ω, 10V, 2.5V
ON Semiconductor
Trans MOSFET N-CH 600V 20.2A 3Pin(3+Tab) TO-220 Rail
Micross
Power Field-Effect Transistor,
Fairchild
FAIRCHILD SEMICONDUCTOR FCP190N60E Power MOSFET, N Channel, 20.6A, 600V, 0.16Ω, 10V, 2.5V
ON Semiconductor
MOSFET N-CH 600V TO220-3
Fairchild
Trans MOSFET N-CH 600V 20.2A 3Pin TO-220 Tube
ON Semiconductor
N-Channel SuperFET® II MOSFET 600V, 20.2A, 199mΩ
Micross
Power Field-Effect Transistor,
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