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FCPF11N60NT
$ 0.448
FCPF11N60NT Datasheet PDF (10 Pages)
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FCPF11N60NT Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Power Dissipation
32.1 W
Drain to Source Voltage (Vds)
600 V
Rise Time
9.1 ns
Input Capacitance (Ciss)
1130pF @100V(Vds)
Input Power (Max)
32.1 W
Fall Time
10 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
32.1 W

FCPF11N60NT Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Rail, Tube
Size-Length
10.16 mm
Size-Width
4.7 mm
Size-Height
15.9 mm
Operating Temperature
-55℃ ~ 150℃

FCPF11N60NT Documents

ON Semiconductor
10 Pages / 0.63 MByte
ON Semiconductor
12 Pages / 0.74 MByte
ON Semiconductor
11 Pages / 1.89 MByte

FCPF11N60 Documents

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Single N-Channel 600V 36W 52NC Silicon Through Hole Mosfet - TO-220F
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MOSFET N-CH 600V 11A TO220F
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MOSFET N-CH 600V 11A TO220F
Fairchild
FAIRCHILD SEMICONDUCTOR FCPF11N60NT Power MOSFET, N Channel, 10.8A, 600V, 0.255Ω, 10V, 2V
Fairchild
Trans MOSFET N-CH 600V 11A 3Pin(3+Tab) TO-220F Rail
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MOSFET N-CH 600V 10.8A TO220F
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N-Channel SuperFET® FRFET® MOSFET
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Trans MOSFET N-CH 600V 11A 3Pin(3+Tab) TO-220F Rail
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MOSFET N-CH 600V 11A TO-220F
Fairchild
N-CHANNEL MOSFET 600V, 10.8A, 0.299Ω
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