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Part Datasheet Search > Fairchild > FDC6301N_Q Datasheet PDF
FDC6301N_Q
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FDC6301N_Q Datasheet PDF (5 Pages)
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FDC6301N_Q Specifications

TYPE
DESCRIPTION
Case/Package
SSOT-6
Polarity
N-CH
Power Dissipation
900 mW
Drain to Source Voltage (Vds)
25 V
Continuous Drain Current (Ids)
0.22A
Rise Time
4.5 ns
Fall Time
4.5 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃

FDC6301N_Q Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Size-Length
2.9 mm
Size-Width
1.6 mm
Size-Height
1.1 mm

FDC6301N_Q Documents

Fairchild
5 Pages / 0.24 MByte

FDC6301 Documents

Fairchild
Dual N-Channel , Digital FET
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FAIRCHILD SEMICONDUCTOR FDC6301N Dual MOSFET, Dual N Channel, 220mA, 25V, 4Ω, 4.5V, 850mV
ON Semiconductor
Trans MOSFET N-CH 25V 0.22A 6Pin SuperSOT T/R
Fairchild
MOSFET SSOT-6 N-CH 25V
Fairchild
Dual N-Channel , Digital FET
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MOSFET 2 N-CH 25V SUPERSOT6
Fairchild
Trans Mosfet n-Ch 25V 0.22A 6Pin Supersot
National Semiconductor
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